It is the highest energy state occupied by a free electron at absolute temperature.
It is the maximum energy possessed by a free electron at absolute temperature.
Figure 1: Fermi energy and Fermi level diagram illustrating electron occupancy in a semiconductor.
Figure 2: Fermi level in intrinsic and extrinsic semiconductors.In intrinsic semiconductors, it lies near the middle of the band gap, while in n-type it shifts toward the conduction band and in p-type it shifts toward the valence band.
Electrons are fermions which have half integral spin. They obey Fermi Dirac statistics. It is denoted as f(E) and is given by
\[ f(E) = \frac{1}{1+\exp \left ( \frac{E-E_F}{kT} \right )} \]The above equation represents the Fermi Dirac (FD) statistics which tells us the probability of occupation of a given energy state as a function of a temperature. Lets discuss the following cases to understand the significance of FD function.
Figure 3: Fermi–Dirac distribution function graph. At 0 K, states below the Fermi energy are fully occupied and above are empty. At higher temperatures, the probability curve smoothens around the Fermi level.
At temperature T = 0 K,
\[ f(E) = \begin{cases} 1 & \text{if } E < E_f, \\ 0 & \text{if } E > E_f, \end{cases} \]This means at 0 kelvin all the energy states below the Fermi energy are occupied and all energy state above Ef are unoccupied. At 0 kelvin f(E) is just a delta function.. Also at any temperature T, for E = Ef ; f(E) = 1/2.
if we increase the temperature some of the states above Ef will get populated. If we further increase the temperature (T2), f(E) will increase. However, irrespective of temperature, probability at Fermi energy Ef will always be half.
The Fermi–Dirac distribution gives the probability that an electron occupies an energy level at temperature T. At T=0 K, all states below the Fermi energy are filled and above are empty. At T > 0 K, the curve smoothens near the Fermi level. This concept explains electron behavior in metals and semiconductors, helping to understand carrier concentration, conductivity, and device operation.
b) Fermions
b) \( f(E) = \frac{1}{1 + e^{(E - E_f)/kT}} \)
c) States below Ef are filled and above Ef are empty
a) Highest occupied level at T = 0 K
a) Semiconductor physics